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d a t a sh eet product data sheet 2004 feb 18 discrete semiconductors pesdxs2uat series double esd protection diodes in sot23 package
2004 feb 18 2 nxp semiconductors product data sheet double esd protection diodes in sot23 package pesdxs2uat series features ? unidirectional esd protection of up to two lines ? common-cathode configuration ? max. peak pulse power: p pp = 330 w at t p = 8/20 s ? low clamping voltage: v (cl)r = 20 v at i pp = 18 a ? ultra-low reverse leakage current: i rm < 700 na ? esd protection > 30 kv ? iec 61000-4-2; level 4 (esd) ? iec 61000-4-5 (surge); i pp = 18 a at t p = 8/20 s. applications ? computers and peripherals ? communication systems ? audio and video equipment ? data lines ? can bus protection. description unidirectional double esd protection diodes in common cathode configuration in the sot23 plastic package. designed to protect up to two transmission or data lines against damage from electrostatic discharge (esd) and other transients. marking note 1. * = p : made in hong kong. * = t : made in malaysia. * = w : made in china. quick reference data pinning type number marking code (1) pesd3v3s2uat *7a pesd5v0s2uat *7b pesd12vs2uat *7c pesd15vs2uat *7d PESD24VS2UAT *7e symbol parameter value unit v rwm reverse stand-off voltage 3.3, 5, 12, 15 and 24 v c d diode capacitance v r = 0 v; f = 1 mhz 207, 152, 38, 32 and 23 pf number of protected lines 2 pin description 1 anode 1 2 anode 2 3 common cathode sym002 2 1 3 1 2 001aaa40 1 3 fig.1 simplified outline (sot23) and symbol.
2004 feb 18 3 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series ordering information limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. non-repetitive current pulse 8/20 s exponential decay waveform; see fig.2 . 2. measured across either pins 1 and 3 or pins 2 and 3. type number package name description version pesd3v3s2uat ? plastic surface mounted package; 3 leads sot23 pesd5v0s2uat pesd12vs2uat pesd15vs2uat PESD24VS2UAT symbol parameter conditions min. max. unit p pp peak pulse power 8/20 s pulse; notes 1 and 2 pesd3v3s2uat ? 330 w pesd5v0s2uat ? 260 w pesd12vs2uat ? 180 w pesd15vs2uat ? 160 w PESD24VS2UAT ? 160 w i pp peak pulse current 8/20 s pulse; notes 1 and 2 pesd3v3s2uat ? 18 a pesd5v0s2uat ? 15 a pesd12vs2uat ? 5 a pesd15vs2uat ? 5 a PESD24VS2UAT ? 3 a t j junction temperature ? 150 c t amb operating ambient temperature ? 65 +150 c t stg storage temperature ? 65 +150 c
2004 feb 18 4 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series esd maximum ratings notes 1. device stressed with ten non-repetitive esd pulses; see fig.3 . 2. measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7. symbol parameter conditions value unit esd electrostatic discharge iec 61000-4-2 (contact discharge); notes 1 and 2 pesd3v3s2uat 30 kv pesd5v0s2uat 30 kv pesd12vs2uat 30 kv pesd15vs2uat 30 kv PESD24VS2UAT 23 kv hbm mil-std 883 pesdxs2uat-series 10 kv esd standards compliance esd standard conditions iec 61000-4-2; level 4 (esd); see fig.3 > 15 kv (air); > 8 kv (contact) hbm mil-std 883; class 3 > 4 kv handbook, halfpage 010 e ? t 20 t ( s) i pp (%) 40 120 0 40 80 30 mle218 100 % i pp ; 8 s 50 % i pp ; 20 s fig.2 8/20 s pulse waveform according to iec 61000-4-5. 001aaa19 1 i pp 1 00 % 90 % t 30 ns 60 ns 10 % t r = 0.7 to 1 ns fig.3 electrostatic discharge (esd) pulse waveform according to iec 61000-4-2.
2004 feb 18 5 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series electrical characteristics t j = 25 c; unless othe rwise specified. symbol parameter conditions min. typ. max. unit v rwm reverse stand-off voltage pesd3v3s2uat ? ? 3.3 v pesd5v0s2uat ? ? 5 v pesd12vs2uat ? ? 12 v pesd15vs2uat ? ? 15 v PESD24VS2UAT ? ? 24 v i rm reverse leakage current pesd3v3s2uat v rwm = 3.3 v ? 0.7 2 a pesd5v0s2uat v rwm = 5 v ? 0.1 1 a pesd12vs2uat v rwm = 12 v ? <1 50 na pesd15vs2uat v rwm = 15 v ? <1 50 na PESD24VS2UAT v rwm = 24 v ? <1 50 na v br breakdown voltage i z = 5 ma pesd3v3s2uat 5.2 5.6 6.0 v pesd5v0s2uat 6.4 6.8 7.2 v pesd12vs2uat 14.7 15.0 15.3 v pesd15vs2uat 17.6 18.0 18.4 v PESD24VS2UAT 26.5 27.0 27.5 v c d diode capacitance f = 1 mhz; v r = 0 v pesd3v3s2uat ? 207 300 pf pesd5v0s2uat ? 152 200 pf pesd12vs2uat ? 38 75 pf pesd15vs2uat ? 32 70 pf PESD24VS2UAT ? 23 50 pf v (cl)r clamping voltage notes 1 and 2 pesd3v3s2uat i pp = 1 a ? ? 7 v i pp = 18 a ? ? 20 v pesd5v0s2uat i pp = 1 a ? ? 9 v i pp = 15 a ? ? 20 v pesd12vs2uat i pp = 1 a ? ? 19 v i pp = 5 a ? ? 35 v pesd15vs2uat i pp = 1 a ? ? 23 v i pp = 5 a ? ? 40 v PESD24VS2UAT i pp = 1 a ? ? 36 v i pp = 3 a ? ? 70 v
2004 feb 18 6 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series notes 1. non-repetitive current pulse 8/20 s exponential decay waveform; see fig.2 . 2. measured either across pins 1 and 3 or pins 2 and 3. r diff differential resistance pesd3v3s2uat i r = 1 ma ? ? 400 ? pesd5v0s2uat i r = 1 ma ? ? 80 ? pesd12vs2uat i r = 1 ma ? ? 200 ? pesd15vs2uat i r = 1 ma ? ? 225 ? PESD24VS2UAT i r = 0.5 ma ? ? 300 ? symbol parameter conditions min. typ. max. unit graphical data 001aaa147 10 3 10 2 10 4 p pp (w) 10 t p ( s) 110 4 10 3 10 10 2 (1) (2) fig.4 peak pulse power dissipation as a function of pulse time; typical values. t amb = 25 c. t p = 8/20 s exponential decay waveform; see fig.2. (1) pesd3v3s2uat and pesd5v0s2uat. (2) pesd12vs2uat, pesd15 vs2uat, PESD24VS2UAT t j ( c) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 p pp 0 p pp(25 c) fig.5 relative variation of peak pulse power as a function of junction temperature; typical values.
2004 feb 18 7 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series v r (v) 05 4 23 1 001aaa148 120 160 80 200 240 c d (pf) 40 (1) (2) fig.6 diode capacitance as a function of reverse voltage; typical values. t amb = 25 c; f = 1 mhz. (1) pesd3v3s2uat; v rwm = 3.3 v. (2) pesd5v0s2uat; v rwm = 5 v. v r (v) 025 20 10 15 5 001aaa149 20 30 10 40 50 c d (pf) 0 (1) (3) (2) fig.7 diode capacitance as a function of reverse voltage; typical values. t amb = 25 c; f = 1 mhz. (1) pesd12vs2uat; v rwm = 12 v. (2) pesd15vs2uat; v rwm = 15 v. (3) PESD24VS2UAT; v rwm = 24 v.
2004 feb 18 8 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series 001aaa270 1 10 10 ? 1 t j ( c) ? 100 150 100 050 ? 50 i r i r(25?c) (1) fig.8 relative variation of reverse leakage current as a function of junction temperature; typical values. i r is less than 10 na at 150 c for: pesd12v52uat; v rwm = 12 v. pesd15vs2uat; v rwm = 15 v. PESD24VS2UAT; v rwm = 24 v. (1) pesd3v3s2uat; v rwm = 3.3 v. pesd5v0s2uat; v rwm = 5 v.
2004 feb 18 9 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series 001aaa15 1 450 ? 50 ? note 1: iec61000-4-2 network c z = 150 pf; r z = 330 ? d.u.t.: pesdxs2uat rg 223/u 50 ? coax r z c z esd tester 4 ghz digital oscilloscope 10 attenuator vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 20 v/div horizontal scale = 50 ns/div vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 10 v/div horizontal scale = 50 ns/div g nd gnd gnd gnd gnd gnd gnd unclamped + 1 kv esd voltage waveform (iec61000-4-2 network) clamped + 1 kv esd voltage waveform (iec61000-4-2 network) g nd unclamped ? 1 kv esd voltage waveform (iec61000-4-2 network) clamped ? 1 kv esd voltage waveform (iec61000-4-2 network) note 1 PESD24VS2UAT pesd15vs2uat pesd12vs2uat pesd5v0s2l pesd3v3s2uat fig.9 esd clamping test set-up and waveforms.
2004 feb 18 10 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series application information the pesdxs2uat series ca n protect up to two lines again st damage caused by unidirect ional electrostatic discharge (esd) and surge pulses. the pesdxs2uat series can protect lines whos e signal polarities are below ground. pesdxs2uat series provide a surge capability of up to 330 watts pe ak pulse power pe r line for a 8/20 s waveform. circuit board layout and pr otection device placement circuit board layout is critical for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the pesdxs2uat as close as possible to the input terminal or connector. 2. minimize the path le ngth between the pesdxs2uat and the protected line. 3. keep parallel signal paths to a minimum. 4. avoid running protected conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board conductive loops including power and ground loops. 6. minimize the length of transient return paths to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. 9. use vias for multi-layer printed-circuit boards. 001aaa17 9 pesdxs2uat line 1 to be protected unidirectional protection of two lines bidirectional protection of one line line 2 to be protected ground pesdxs2uat line 1 to be protecte d ground fig.10 typical application: esd protection of data lines.
2004 feb 18 11 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series package outline unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 04-11-04 06-03-16 iec jedec jeita mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface-mounted package; 3 leads sot2 3
2004 feb 18 12 nxp semico nductors product data sheet double esd pr otection diodes in sot23 package pesdxs2uat series data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content, except for package outline drawings which were updated to the latest version. printed in the netherlands r76/01/pp 13 date of release: 2004 feb 18 document order number: 9397 750 12247

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